Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
Band gap narrowing in n-type and p-type 3C-, 2H-, 4H-, 6H-SiC, and Si: Journal of Applied Physics: Vol 86, No 8
Band gap of C3N4 in the GW approximation - ScienceDirect
Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation - ScienceDirect
Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
Band gap determination of graphene, h-boron nitride, phosphorene, silicene, stanene, and germanene nanoribbons - IOPscience
Transition of wide-band gap semiconductor h-BN(BN)/P heterostructure via single-atom-embedding - Journal of Materials Chemistry C (RSC Publishing)
Fluorinated h-BN as a magnetic semiconductor | Science Advances
Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
Fluorinated h-BN as a magnetic semiconductor | Science Advances
Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Band gap narrowing and radiative efficiency of silicon doped GaN
Zbrojnice Racionalizace nepříjemný dámské jenové šortky Osvětlit Vraťte se Hlasování
Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Tuning the Electronic Band Gap of Oxygen-Bearing Cubic Zirconium Nitride: c-Zr3–x(N1–xOx)4 | ACS Applied Electronic Materials
Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Band gap of C3N4 in the GW approximation - ScienceDirect
Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
Band gap narrowing and radiative efficiency of silicon doped GaN
Zbrojnice Racionalizace nepříjemný dámské jenové šortky Osvětlit Vraťte se Hlasování
Zbrojnice Racionalizace nepříjemný dámské jenové šortky Osvětlit Vraťte se Hlasování
Wide-Range Band-Gap Tuning and High Electrical Conductivity in La- and Pb-Doped SrSnO3 Epitaxial Films | ACS Applied Materials & Interfaces
